METHOD FOR MANUFACTURING MAGNETIC STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To allow a processing accuracy of a tunnel magnetoresistance effect element (TMR element) and a formation of a self-aligning connecting part to be compatible without necessity of a special pattern forming technique. SOLUTION: A method for manufacturing a magnetic storage device comprises a step of processing a magnetoresistance effect film 15 having a tunnel barrier layer 13 interposed between a magnetization fixing layer 12 and a storage layer 14 in a predetermined element shape. A mask layer (plating layer 20) is formed in the predetermined element shape in such a manner that the mask layer is formed by a plating method.