| 摘要 |
<p>PROBLEM TO BE SOLVED: To make a non-contact measurement of a semiconductor, specifically, a silicon substrate. SOLUTION: A substrate placement apparatus 1 comprises a substrate placement stand 2 having a placement face to place a substrate 9 to be processed on, and at least one optical path body 9 which is so disposed that one end is opposite to the substrate 9 to be processed which is placed on the substrate placement stand 2. Light in such a wavelength region as to have energy higher than the band gap energy of the substrate 9 to be processed is introduced into the substrate 9 to be processed via the optical path body 4, and Raman scattered light generated from the substrate 9 to be processed is derived. The Raman scattered light derived by the substrate placement apparatus 1 is introduced into a temperature measurement apparatus 10 via the optical path body 4, and the temperature measurement apparatus 10 then measures the temperature of the substrate 9 to be processed. Based on the temperature measured by the temperature measurement apparatus 10, a substrate processing apparatus adjusts the temperature of the substrate 9d to be processed.</p> |
