| 摘要 |
<p>PROBLEM TO BE SOLVED: To relieve the step of an aluminium pad on a copper pad, to reduce the film thickness of the aluminium pad, to facilitate manufacture and to prevent the oxidation of the copper pad. SOLUTION: Copper is embedded in a connection via opening part 109, arranged in an intermediate layer insulating film 108 covering the copper pad 105, and a connection copper via 111 is formed. The aluminium pad 113, having barrier metal 112 preventing reaction of copper with aluminium at a lower face is formed on the via 111. The copper pad 105 and the aluminium pad 113 are electrically connected via the connection copper via 111. The step of the connection via opening part 109 is set to be almost zero in the connection copper via 111. The film thickness of aluminium for forming the aluminium pad 13 is reduced, and manufacturing cost is reduced. Even if the connection copper via 111 directly under the aluminium pad 113 is oxidized, the oxidation of the copper pad 105 is prevented, disconnection in copper wiring 104 connected to the copper pad 105 is prevented, and the reliability of a semiconductor device is improved.</p> |
