THIN FILM SEMICONDUCTOR DEVICE AND ITS SUBSTRATE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a thin film semiconductor device wherein a unit circuit having a gate electrode, a source electrode and a drain electrode is formed and arranged in order for every semiconductor single crystal grain formed in a semiconductor thin film, and can operate with high mobility without detrimentally affected by electron scattering or the like in grain boundary during operation, and its substrate and a manufacturing method thereof. SOLUTION: A substrate of a thin film semiconductor device has a semiconductor thin film layer wherein single crystal grain of a large diameter is aligned and arranged regularly by carrying out energy line irradiation in distributed form of energy line strength wherein a maximum value and a minimum value of irradiation energy line are aligned and arranged regularly for each irradiation region in a non-crystalline semiconductor thin film on an insulation substrate layer. A unit electrode is formed by positioning for each single crystal grain of the semiconductor thin film layer by using the substrate. Consequently, a thin film semiconductor device wherein a unit circuit is formed and arranged in order for each single crystal grain can be obtained.