发明名称 PIEZOELECTRIC THIN FILM ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a PZT-based piezoelectric thin film element that is not affected by the conditions of piezoelectric thin film crystallizing heat treatment, can be manufactured without requiring strict control, and is highly oriented in (111)-orientation. SOLUTION: This piezoelectric thin film element is composed of a (111)-oriented Pt lower electrode and a (111)-oriented piezoelectric thin film formed on the electrode. At the time of manufacturing the element, the difference in lattice spacing between the electrode and thin film is adjusted to <=2% of the (111)-spacing of the electrode.
申请公布号 JP2003031863(A) 申请公布日期 2003.01.31
申请号 JP20010217998 申请日期 2001.07.18
申请人 SONY CORP 发明人 TAMURA TAKASHI;TAKAHASHI KAZUO;NIHEI YUKARI;HONDA JUNICHI
分类号 H01L41/09;H01L41/18;H01L41/187;(IPC1-7):H01L41/09 主分类号 H01L41/09
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