发明名称 PLASMA ETCHING APPARATUS
摘要 PROBLEM TO BE SOLVED: To solve the problem of a conventional plasma etching apparatus having the possibility of dropping and adhering ionized particles which are not immediately discharged by only exhausting, the particles floating in a plasma-generating space on a material to be treated, having a residual charge, immediately after etching is finished. SOLUTION: The plasma etching apparatus 101 comprises a vacuum chamber 2, a holding electrode 3, an opposed electrode 4 arranged opposite to the electrode 3, a plasma-generating RF power source 5, a ring-like electrode 102 as a third electrode disposed, so as to surround a periphery of the space region, in which the electrode 3 and the electrode 4 face each other in the chamber 2, and a power source 103 for the third electrode connected to the electrode 102 to make electrode 102 charged.
申请公布号 JP2003031553(A) 申请公布日期 2003.01.31
申请号 JP20010214818 申请日期 2001.07.16
申请人 NEC KANSAI LTD 发明人 HIHARA KATSUMI
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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