| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for annealing which enables realization of a uniform ohmic contact. SOLUTION: Annealing is conducted, with an electrode 232 of a semiconductor device in contact with a sample stand 210, which is such that a diffusion preventing layer 211 for preventing the diffusion of an electrode 212 of the semiconductor device into a substrate 201, is formed on the substrate 201 which has nearly the same coefficient of thermal conductivity as a substrate 203 of the semiconductor device. The substrate of the sample stand 210 consists of an element, which is included in the substrate 203 of the semiconductor device and is liberated during annealing. When the electrode of the semiconductor device is brought into contact with the sample stand 210, a part of the substrate 201 of the sample stand is made to expose.
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