| 摘要 |
PROBLEM TO BE SOLVED: To provide a preparation technique of high controllability, large margin and high producibility. SOLUTION: The apparatus has a first treatment chamber for forming a silicon oxide film and an amorphous silicon film on a substrate with an insulation surface, a second treatment chamber for dehydrogenization by performing heat treatment continuously without exposing the substrate subjected to film formation to the air, a third treatment chamber for forming a silicon nitride film continuously in the dehydrogenized substrate and a common chamber connected commonly to the first treatment chamber, the second treatment chamber and the third treatment chamber. The first treatment chamber, the second treatment chamber and the third treatment chamber have an air-tight structure. The common chamber has a means for carrying a substrate. After a substrate is subjected to heat treatment in the second treatment chamber, treatment is carried out in each treatment chamber.
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