| 摘要 |
PROBLEM TO BE SOLVED: To enable correction using an error correction circuit, by making prevention of only single memory cell information being in error, without making a plurality of memory cell information an error simultaneously, when one word line is defective, in a ferroelectric memory device form which data of a plurality of memory cells are outputted in parallel. SOLUTION: At read-out operation, read-out/write-in of the data of one memory cell are conducted for one word line, and read-out/write-in of data of a plurality of memory cells indicated in a region 12 are performed, by selecting a plurality of word lines. Thereby, only single memory cell information result will result in error, without making a plurality of memory cell information an error simultaneously, even if one word line is defective, and correction can be made using the error correction circuit 10.
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