| 摘要 |
PROBLEM TO BE SOLVED: To provide a low cost semiconductor device capable of being simply manufacturing irrespective of consolidating bipolar transistor capable of rapidly operating, a resistance element and a capacitance element on the same semiconductor base, and to provide a method for manufacturing the same. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of forming a semiconcudotr layer 22 which is an epitaxial layer on the semiconductor base 14 and which is a polycrystal layer on an insulating film 18; and simultaneously working the layer 22 in a pattern of a semiconductor layer 22a as a base layer of the bipolar transistor 32 having the epitaxial layer and in a pattern of semiconductor layers 22b, 22c as resistance elements 33, 34 of the polycrystal layer. Thus, an increase in manufacturing step is suppressed.
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