| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element in which refresh characteristics can be enhanced by reducing a leak current being generated in a cell transistor by the stress of a nitride film without requiring any extra process. SOLUTION: The method for manufacturing a synchronous DRAM element comprises a step for preparing a semiconductor substrate 40 on which a gate insulating film 44 and a gate G are formed sequentially, a step for implanting impurity ions into the semiconductor substrate 40 from the opposite sides of the gate G, a step for forming a source-drain region 56 by heat-treating the semiconductor substrate 40 implanted with impurity ions under an oxygen atmosphere thereby activating the impurity ions and, at the same time, forming a second oxide film 58 on the surface of the semiconductor substrate 40, a step for forming a nitride film on the entire structure where formation of the second oxide film has completed, and a step for etching the entire surface of the nitride film and forming a second nitride film spacer 60 having a bottom face touching the second oxide film 58. |
