| 摘要 |
PROBLEM TO BE SOLVED: To form structure which restrains oxidation of a contact plug connected with a lower electrode and prevents the lower electrode from falling down, when the lower columnar electrode of a capacitor is formed by an electroplating method. SOLUTION: This method includes a process for forming a silicon nitride film 109 composed of an insulator on an interlayer insulating film and a contact plug, a process for forming a ruthenium film 110 on the silicon nitride film 109, a process for forming a silicon oxide film 111 composed of an insulator on the ruthenium film 110, a process for forming an aperture 112 penetrating the silicon nitride film 109, the ruthenium film 110 and the silicon oxide film 111, a process for embedding an electrode material and forming the lower electrode 113 in the aperture part 112 by an electroplating method, a process for eliminating the silicon oxide film 111 selectively, and a process for eliminating the ruthenium film 110 on the silicon nitride film 109. |
