| 摘要 |
PROBLEM TO BE SOLVED: To stably provide a low on-resistance bipolar transistor having sufficient performance with simple manufacturing process. SOLUTION: A base 5 and a high concentration ohmic diffusion zone 11 for a collector are formed in a collector 3 at intervals, an emitter 7 and a high concentration ohmic diffusion zone 9 for a base are formed in the base 5 at intervals, and a gate electrode 15 is formed over the collector 3 and the base 5 adjacent to the emitter 7 at intervals with a high concentration ohmic diffusion zone 11 for a collector through the gate oxide film 13. The high concentration ohmic diffusion zone 9 for a base and the gate electrode 15 are connected to an input terminal 29 and kept in the same potential through a base wiring 25 or a gate electrode wiring 27. In an ON state, no high voltage is applied to the gate electrode 15 because the potential from the base 5 to the emitter 7 is forward and the potential between the base 5 and the gate electrode 15 is same. This suppresses breakages of the gate oxide film 13.
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