MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To manufacture a semiconductor substrate wherein current flows well not only in a growth direction of crystal but also in a direction perpendicular to it in a manufacturing method of a semiconductor substrate for forming a crystalline semiconductor film on the surface by using an SLS method. SOLUTION: An amorphous semiconductor film 21 is formed on an insulating substrate 1. A laser beam is subjected to pulse radiation to the amorphous semiconductor film 21 while moving at lest one of the insulating substrate 1 and a laser radiation means 31 to one direction. After the amorphous semiconductor film 21 crystallized gradually in the moving direction and a first crystallized region A is formed, the laser beam is subjected to pulse radiation while moving at least one of the insulating substrate 1 and the laser radiation means 31 is almost a vertical direction in the moving direction by using the inside of a first crystallized region A as a radiation start position, and a semiconductor film is crystallized gradually.