INVERSE LEVEL SHIFT CIRCUIT AND POWER SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide an inverse level shift circuit at a low cost with excellent reliability without using a Pch-DMOS(P-channel Double diffusion Metal Oxide Semiconductor) transistor that is configured on the same semiconductor substrate as a level shift circuit. SOLUTION: A voltage-current conversion section CV1 and a current source CS1 convert a high side input voltage signal VIN into a current signal. An Nch-DMOS(N-channel double diffusion metal oxide semiconductor) ND1 of common gate configuration is used for a high breakdown voltage resistor to transfer the current signal to a low side. A voltage-current conversion section CV2 and a current source CS2 convert the current signal into a voltage signal on the low side. Thus, a change in the signal VIN on the basis of a level HGND as a reference level can be outputted as a signal change in a signal VOUT on the basis of a level GND as the reference level. Thus, the inverse level shift circuit can be realized at a low cost with excellent reliability without using a Pch-DMOS transistor.