| 摘要 |
PROBLEM TO BE SOLVED: To perform dip development to a substrate on a conveyance path laid in a horizontal direction. SOLUTION: A dip development treating section 130(1) has a frame 126 for forming an outer-periphery wall to the surface of a substrate G on a conveyance path 108 detachably, one or a plurality developer supply nozzles 128 for supplying developer Q onto the substrate G in or inside the frame 126, and a frame placement mechanism 152 for placing the frame 126 onto the substrate G on the conveyance path 108. The frame 126 has a shape, size, and plate thickness that can be placed on the circumferential section of the substrate G. |
