发明名称 HALL'S MICROSENSOR
摘要 Hall's microsensor has a semiconductor substrate (1) of mixed type of conductivity, on one of the sides of which the supply (2, 3, 4) and registering (5,6) contacts are machined in a suitable manner, so that the external magnetic field (9) applied parallel to the surface of the chip shall general Hall's high value voltage. The microsensor design overcomes some shortcomings, such as reduced magnetic sensitivity, parasite voltage at the output in the absence of magnetic field, and restricted opportunity for the miniaturization of the longitudinal size. 1 claim, 1 figure
申请公布号 BG105697(A) 申请公布日期 2003.01.31
申请号 BG20010105697D 申请日期 2001.07.12
申请人 INSTITUT PO UPRAVLENIE I SISTEMNI IZSLEDVANIJA PRI BAN;RUMENIN CHAVDAR S.;NIKOLOV DIMITAR I.;IVANOV AVGUST J. 发明人 RUMENIN, CHAVDAR S.;NIKOLOV, DIMITAR I.;IVANOV, AVGUST J.
分类号 H01L43/04;H01L43/06;(IPC1-7):H01L43/04 主分类号 H01L43/04
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