| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a reticle for electron beam exposure where warp is extremely small, and generation of position distortion of a blank due to resist stress can be reduced, a reticle blank for electron beam reduction exposure, and the manufacturing method of the reticle blank for electron beam reduction exposure. SOLUTION: The manufacturing method of the reticle blank for electron beam reduction exposure manufactures the reticle blank for electron beam exposure comprising a silicon membrane and Pyrex (registered trademark) glass substrate 12. The method includes a process for carrying out machining for providing a post onto the Pyrex (registered trademark) glass substrate 12; a process for preparing an SOI wafer composed of a thin-film silicon layer 15, a silicon oxide layer, and a silicon support substrate; a process for laminating the surface of the thin-film silicon layer 15 of the SOI wafer and the Pyrex (registered trademark) glass substrate 12; a process for removing the silicon support substrate; and a process for removing the silicon oxide layer.</p> |
