| 摘要 |
PROBLEM TO BE SOLVED: To meet both needs of a high voltage-resistant transistors requiring no current driving force and transistors requiring no high voltage resistance with requiring current driving force in a nonvolatile memory device. SOLUTION: The nonvolatile semiconductor memory device comprises a semiconductor wafer 1 having a main surface, and a plurality of transistors formed on the main surface. The transistors respectively comprise a gate electrode, a diffusion layer formed adjacent to the gate electrode, and a contact connected to the diffusion layer. Some of all the contacts corresponding to a plurality of transistors have a first distance from the gate electrode and a second distance longer than the first distance.
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