| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a highly reliable wiring structure by suppressing permeation of moisture to the upper layer even if a moisture absorbing SiO2 film is employed as an insulation film material thereby suppressing deterioration of an organic insulation film. SOLUTION: In the semiconductor device having an insulation film structure where an organic insulation film is laid on an inorganic insulation film, the insulation film structure has a moisture absorbing first insulation film 12, a second insulation film 13 formed on the first insulation film 12 in order to reduce permeation of moisture to the upper layer, and an organic insulation film 14 formed on the second insulation film 13.
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