| 摘要 |
PROBLEM TO BE SOLVED: To improve the shape of a contact hole formed on the insulating film of a thin film transistor, etc. SOLUTION: On a transparent substrate 21 on which a gate electrode 22 is arranged, a silicone nitride film 23 and a silicone oxide film 24 becoming the gate insulating films are laminated, and a polycrystal silicone film 25 as a semiconductor film becoming active area is laminated in addition. On the polycrystal silicon film 25 corresponding to the gate electrode 22, a stopper 26 is arranged, and a silicon oxide film 27, a silicon nitride film 28 and a silicon oxide film 29 are laminated as an interlayer insulating film so as to cover this stopper 26. A contact hole 30 is formed at the interlayer insulating film corresponding to a source area 25a and a drain area 25d, and a source electrode 31s and a drain electrode 31d are arranged through this contact hole 30.
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