| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has high productivity, even though the device can operate at a high speed and at high frequencies, and to provide its manufacturing method. SOLUTION: A sidewall 12b, of an end edge 12a of an insulation film 12 on a semiconductor substrate 11, is provided with a compound film 15 of a conductor element and a metal element, and this compound film 15 serves as a gate. The compound film 15 can be formed matching itself with the sidewall 12b, by using semiconductor elements in the insulation film 12, semiconductor elements of a semiconductor film formed on the side wall 12b without using masks, etc. Consequently, the length of a gate can be set at right angles with respect to the sidewall 12b, and then when the gate is formed, application of lithography for prescribing the gate length is not necessary, so that a fine gate can be formed easily without using special exposure apparatus for fine processing.
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