| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for evaluation which enable to evaluate electrical characteristics of a wafer accurately without being influenced by an insulation film on a rear face even if no treatment is applied to the rear face when evaluating electrical characteristics such as withstanding pressure of an oxide film of a wafer having an insulation film such as a CVD oxide film on the rear face, by a mercury probe method. SOLUTION: The apparatus for evaluating a silicon wafer by a mercury probe method comprises at least a mercury probe, a wafer chuck for holding the rear face of a wafer, and a ring for contact connected to the wafer chuck. The ring for contact has such a structure that it is brought into contact with a peripheral part of the surface and/or an edge part of the silicon wafer when the silicon wafer is held by the wafer chuck. At least a part of the ring for contact which is brought into contact with the peripheral part of the surface and/or the edge part of the silicon wafer is formed of a conductor.
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