| 摘要 |
PROBLEM TO BE SOLVED: To enable a zinc oxide semiconductor member suitable for a light- receiving/light-emitting device to be formed on a silicon substrate. SOLUTION: The surface of a silicon substrate 110 is coated with a natural oxide film of a thickness a few tens of Å. In a first process, the natural oxide film is removed with a 10% hydrofluoric(HF) acid which is diluted with pure water (process (1)). The surface of the Si substrate 110 where the oxide film is removed is covered with hydrogen atoms. A large amount of plasma energy is applied in a process (2) where a ZnO thin film is deposited by sputtering. By the applied energy, hydrogen is dissociated at low temperatures, a grid interval difference between silicon and zinc oxide is narrowed, and a thin film buffer layer 130 where amorphous form and fine crystallite reside mixedly is formed. Then, in a process (3), the buffer layer 130 is used as seed crystals, and a ZnO thin film 140 of high quality is grown thereon through an MO-CVD method. |
