| 摘要 |
PROBLEM TO BE SOLVED: To improve the accuracy of the interval between the light-emitting points of two semiconductor layers, having different structures by forming the lasers by using a common mask. SOLUTION: In the first gain-guiding type semiconductor laser, an active layer 6 emits light at a position below a stripe-like oxide film 36. In the index- guiding type second semiconductor laser, an active layer 18 emits light at a position below an oxide film 38. Therefore the interval between the light- emitting points of the two lasers varies, depending upon the interval between the oxide films 36 and 38. Since the oxide films 36 and 38 are formed through etching, by using stripe-like photoresist layers 32 and 34, obtained by exposing and developing a photoresist by using a single exposure mask as masks, the interval between the light-emitting points is set with very high accuracy.
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