| 摘要 |
PROBLEM TO BE SOLVED: To form a contact, with the diffusion and redistribution of impurities due to annealing being suppressed. SOLUTION: An interlayer insulation film is formed on a silicon substrate (step S1), and a contact hole is formed which reaches the silicon substrate (step S2). The silicon substrate at the bottom of the contact hole is turned into amorphous form, to form an amorphous substrate part (step S3), and the contact hole is filled with an amorphous semiconductor containing impurities (step S4), and then a low-temperature annealing process is conducted (step S5). According to this method, the amorphous semiconductor and the amorphous substrate part are crystallized and impurities are activated, and thereby a low- resistance contact is formed. Moreover, the diffusion of impurities from the contact hole to the silicon substrate, and the redistribution of the impurities inside the substrate are suppressed.
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