| 摘要 |
PROBLEM TO BE SOLVED: To generate a reference voltage by which read-out is performed accurately, without causing malfunction, in a 1T1C-type ferroelectric memory device. SOLUTION: When data are read out from memory cells (MC1, DMC1), first, read-out operation (HD1-HD4) of a direction, in which polarization inversion is performed for a reference memory cell DMC1 is repeated plural times. Next, a reference voltage (B) read out to a second bit line (BL2) and signal voltage (A or C), read out to a first bit line (BL1) are compared and are amplified by a sense amplifier (SAP). The reference voltage (B) can be set surely to an intermediate voltage with the signal voltage (A or C) by repeating read- out operation (HD1-HD4) of a direction, in which polarization inversion is conducted for the reference memory cell (DMC1) plural times.
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