发明名称 SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor module, with which the abnormal elevation of a temperature in a specified area inside the semiconductor module can be prevented and reliability is high in spite of miniaturization, by making uniform the distribution of heat flux caused by a current to be passed from a bonding wire to a wiring layer. SOLUTION: When the dimension of the semiconductor module is reduced for cost reduction or the like, the reduction of the width of a wiring layer 23 not to be affected by heating of a semiconductor device 4 is required. As a result, the temperature elevation caused by the total heat quantity of self- heating by the current to be passed through the wiring layer 23, and the quantity of heat to flow into the wiring layer 23 in the heating loss of the bonding wire 5 is enlarged. Then, the width of the wiring layer 23 is changed to be gradually widened corresponding to the increase of the passing current and further, the bonding area width of the bonding wire 5 is spread. Then, the flux of heat propagated by conduction is made almost uniform. Thus, the dispersion in the temperature distribution of the wiring layer 23 can be reduced and at the same time, the overheat of the bonding wire 5 can be prevented.
申请公布号 JP2003031717(A) 申请公布日期 2003.01.31
申请号 JP20010218052 申请日期 2001.07.18
申请人 HITACHI LTD 发明人 OSONE YASUO;IIZUKA MAMORU;KOYAMA KENJI;NAKAZATO NORIO
分类号 H01L23/12 主分类号 H01L23/12
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