SEMICONDUCTOR DEVICE HAVING BORDERLESS CONTACT STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a borderless contact structure, and also to provide a method for manufacturing the semiconductor device. SOLUTION: An etching protection layer 116 is formed on each gate electrodes 109 and a semiconductor substrate 100. Spacers 118 are formed on the etching protection layer 116 on both side surfaces of each gate electrode 109. The gate electrodes 109 including the spacers 118 are subjected to source/ drain ion implantation with use of a mask, and then the spacer 118 is removed. An etching stop layer 124 and an interlayer insulating film 126 are sequentially formed on the entire surface of a resultant substrate, and then subjected to etching operation to form a first contact hole 128a and a second contact hole 128b for a borderless contact.