| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is reliable and has the gate structure of a stabilized breakdown voltage. SOLUTION: On the surface of an n- type epilayer 3 consisting of a semiconductor monocrystal, an n<+> type source layer 5 is formed by introducing and activating impurity by ion implantation. On the surface of the epilayer 3 including this source layer 5, a gate insulating film 6 is formed. The film thickness of an end 6A positioned on the source area 5 at this gate insulating film 6 is set to be thicker than the other part of the gate insulating film 6. Thus, the breakdown voltage of the end 6A of the gate insulating film 6 becomes high and the reliability of the semiconductor device 1 is improved.
|
