SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve reliablity of a semiconductor device by making latch-up caused by a parasitic thyristor strucute hard to occur, and avoiding a decrease in reliability of a circuit operation caused by detouring of noise generated at a well to the other power source via a connecton capacity. SOLUTION: The semiconductor device comprises a p-type well PWL1 disposing an n-type MIS Qn1 surrounded by an n-type well NWL5, and a p-type MIS Qp1 provided on the same semiconductor substrate adjacent to the n-type well NWL5 electrically isolated from an n-type well NWL1 disposed with the p-type MIS Qp1 .