发明名称 Particle beam biaxial orientation of a substrate for epitaxial crystal growth
摘要 The invention provides a method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure by contacting said structure with an oblique particle beam thereby forming in the structure a nucleating surface having increased desired biaxial orientation. The method can further include a step of epitaxially growing the crystalline formation using the nucleating surface to promote the epitaxial growth. The invention also provides a crystalline structure containing a nucleating surface formed by contacting a previously formed non-single-crystal structure with an oblique particle beam, from 0 to 10 adjacent orientation-transmitting layers, and a crystalline active layer. In this structure, the active layer is oriented in registry with the nucleating surface.
申请公布号 US2003019668(A1) 申请公布日期 2003.01.30
申请号 US20010917321 申请日期 2001.07.27
申请人 READE RONALD P.;BERDAHL PAUL H.;RUSSO RICHARD E. 发明人 READE RONALD P.;BERDAHL PAUL H.;RUSSO RICHARD E.
分类号 C30B23/02;C30B25/02;C30B25/18;H01L39/24;(IPC1-7):C30B25/00;G01G13/22;C30B28/12;C30B28/14;C30B23/00 主分类号 C30B23/02
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