A magnetron sputter reactor particularly useful for sputtering a magnetic material such as cobalt into high aspect-ratio holes of a wafer. A magnetron is positioned in back of the target which is spaced from the pedestal supporting the wafer by at least 50% of the wafer diameter in a long-throw configuration. A grounded collimator is additionally placed between the target and wafer, preferably relatively close to the target to mostly confine plasma near the target. A grounded shield protects the sides and bottom of the chamber and the pedestal sides from sputter deposition, and it supports the collimator on a ledge in its middle.
申请公布号
WO03008659(A2)
申请公布日期
2003.01.30
申请号
WO2002US22565
申请日期
2002.07.16
申请人
APPLIED MATERIALS, INC.
发明人
CHA, YONGHWA, CHRIS;YOON, KI, HWAN;KIM, JIN-HYUN;YU, SANG, HO