| 摘要 |
The invention concerns a method for making a MOS transistor comprising the following steps: a) providing a substrate including a thin silicon layer (26), integral with an insulating support (14), and covered with a semiconductor material surface layer (28) having a crystal lattice parameter close to that of silicon; b) locally etching the surface layer to expose the silicon layer in at least a channel region; c) forming an insulated gate (50) above the silicon layer in the channel region, and forming a source and a drain on either side of the channel region, the source and the drain extending into the silicon layer and into the surface layer. |
