SILICON WAFER MANUFACTURING METHOD,SILICON EPITAXIAL WAFER MANUFACTURING METHOD,AND SILICON EPITAXIAL WAFER

摘要

A silicon wafer or silicon epitaxial wafer manufacturing method for adding an excellent−stability IG capability by realizing both a high density of oxygen precipitate and a large size at the stage before the device process. The silicon wafer manufacturing method in which the silicon wafer is heat−treated so as to impart a gettering capability to the silicon wafer comprises at least three steps: a temperature−increasing step A for forming oxygen precipitation nuclei, a temperature−increasing step B for growing the oxygen precipitation nuclei, and a constant temperature−holding step C for further growing the oxygen precipitate larger.