METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a semiconductor device is provided to be capable of preventing the misalignment between a storage node and a storage node contact hole and reducing fabrication cost by simultaneously forming the storage node contact hole when forming the storage node using a storage node mask. CONSTITUTION: After selectively etching the second oxide layer and the second polycrystalline silicon layer formed at the upper portion of a semiconductor substrate(20) by using a storage node mask as an etching mask, a conductive spacer(16) is formed at both sidewalls of the second polycrystalline silicon layer and the second oxide layer. Then, the first oxide layer(13) and the first polycrystalline silicon layer(12) are selectively etched by using the conductive spacer as an etch stop layer. A storage node contact hole is formed by selectively etching the second interlayer dielectric(11) and the first interlayer dielectric(7). After depositing the third polycrystalline silicon layer(17) on the resultant structure, a storage node is formed by etching the resultant structure and sequentially removing the first oxide layer.