A method for producing a bonding wafer by ion implantation stripping method comprising a step for bonding a bond wafer having a micro bubble layer formed by gas ion implantation and a base wafer becoming a supporting substrate, and a step for stripping the bond wafer with the micro bubble layer as a boundary and forming a thin film on the base wafer, wherein the pasted wafer from which the bond wafer is stripped is heat treated in the atmosphere of an inert gas, hydrogen gas or their mixture gas, a thermal oxide film is formed on the surface of the thin film by thermally oxidizing the pasted wafer, and then the thickness of the thin film is reduced by removing the thermal oxide film. Damages and defects on the surface of a pasted wafer produced by ion implantation stripping method can be removed surely while sustaining uniformity in the thickness of a thin film on the wafer, and a method for producing a bonding wafer sufficiently applicable as a mass production technology is provided.
