| 摘要 |
<p>A method for preparing a tungstate single crystal which comprises growing a tungstate single crystal using, as a raw material, tungsten trioxide and a divalent metal oxide or carbonate, tungsten trioxide and a monovalent metal oxide or carbonate and a trivalent metal oxide, or a tungstate represented by the molecular formula: XIIWO4 or XIXIII(WO4)2, wherein XI, XII and XIII represent a monovalent metal element, a divalent metal element and a trivalent metal element, respectively, which is formed through heating above oxides and/or carbonates, and then heating the grown tungstate single crystal at 600°C to 1550°C in an atmosphere having a partial pressure of oxygen adjusted to a pressure less than that in the air. The above method allows the preparation of a tungstate single crystal having an enhanced density and exhibiting an increased quantity of light, which is useful as a scintillator for detecting a radiation such as X-ray or Ϝ-ray, and a tungstate single crystal exhibiting an improved heat conductivity, which is useful as a laser host of a two wave laser device.</p> |
