Semiconductor device and manufacturing method thereof

摘要

Storage node plugs are formed on a semiconductor substrate. A silicon nitride film is formed on a silicon oxide film. By etching the silicon oxide film with the silicon nitride film as a mask, storage node openings each exposing a surface of a corresponding storage node plug are formed, followed by forming a capacitor including a storage node, a capacitor dielectric film and a cell plate in a corresponding opening. With such a procedure, there can be obtained a semiconductor device in which electric short-circuit between adjacent elements is prevented from occurring; and a manufacturing method of such a semiconductor device.