| 发明名称 |
Method of preparing buried LOCOS collar in trench DRAMS |
| 摘要 |
The vertical DRAM capacitor with a buried LOCOS collar characterized by: a self-aligned bottle and gas phase doping; no consumption of silicon at the depth of the buried strap; no reduction of trench diameter; and a nitride layer to protect trench sidewalls during gas phase doping.
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| 申请公布号 |
US2003020112(A1) |
申请公布日期 |
2003.01.30 |
| 申请号 |
US20020147472 |
申请日期 |
2002.09.10 |
| 申请人 |
TEWS HELMUT;KUDELKA STEPHAN;SCHROEDER UWE;WEIS ROLF |
发明人 |
TEWS HELMUT;KUDELKA STEPHAN;SCHROEDER UWE;WEIS ROLF |
| 分类号 |
H01L21/762;H01L21/8242;(IPC1-7):H01L21/824;H01L29/76;H01L29/94 |
主分类号 |
H01L21/762 |
| 代理机构 |
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代理人 |
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