| 摘要 |
High quality epitaxial layers of monocrystalline III-V arsenide nitride materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (74, 104) on a silicon wafer (72, 102). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (78, 108) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline III-V arsenide nitride material layer. Any lattice mismatch between the accommodating buffer layerand the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, an accommodating buffer layer comprising a barium strontium titanium oxide (104) and a monocrystalline III-V arsenide nitride layer (86, 116), such as GaAsN, having a nitrogen concentration ranging from 1-5% function to further reduce any lattice mismatch between layers. |
