发明名称 Memory module and system, an information processing apparatus and a mehtod of use
摘要 A memory cell module comprises a memory cell array formed by memory cells of M columnsxN rows. Each memory cell includes a magnetoresistive element or a magnetresistive element with a semiconductor element. A memory module comprises a first access means to access the memory cell array by a column direction and a second access means to access the memory cell array by a row direction.
申请公布号 US2003023805(A1) 申请公布日期 2003.01.30
申请号 US20020200489 申请日期 2002.07.23
申请人 FUJISAKI KOICHI;NAKAJIMA KENTARO;CHUJOH TAKESHI;TANIGUCHI YASUHIRO 发明人 FUJISAKI KOICHI;NAKAJIMA KENTARO;CHUJOH TAKESHI;TANIGUCHI YASUHIRO
分类号 G06F12/02;G11C8/10;G11C11/15;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G06F12/00 主分类号 G06F12/02
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