发明名称 Active element bias circuit for RF power transistor input
摘要 A biasing circuit for biasing a device (e.g., a GaAs field effect transistor) used for amplifying a radio frequency (RF) signal, the biasing circuit including an active element in series with a resistor, the active element providing a relatively low impedance over a bandwidth comparable to an amplitude modulation bandwidth of the RF signal, such that a DC bias voltage applied at the active element has a fixed DC voltage at the resistor input, i.e., without any memory effect, thereby allowing for improved predistortion compensation of non-linear voltage of the RF signal.
申请公布号 US2003020546(A1) 申请公布日期 2003.01.30
申请号 US20010917573 申请日期 2001.07.27
申请人 TELEFONAKTIEBOLAGET LM ERICSSON 发明人 MARRA THOMAS;MATHE LENNART
分类号 H03F1/30;H03F3/193;(IPC1-7):H03G3/10 主分类号 H03F1/30
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