发明名称 |
Manufacture system for semiconductor device with thin gate insulating film |
摘要 |
A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or N2O containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700° C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.
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申请公布号 |
US2003022523(A1) |
申请公布日期 |
2003.01.30 |
申请号 |
US20020235824 |
申请日期 |
2002.09.06 |
申请人 |
FUJITSU LIMITED |
发明人 |
IRINO KIYOSHI;HIKAZUTANI KEN-ICHI;KAWAMURA TATSUYA;SUGIZAKI TARO;OHKUBO SATOSHI;NAKANISHI TOSHIRO;TAKASAKI KANETAKE |
分类号 |
H01L21/31;H01L21/314;H01L21/316;H01L21/318;(IPC1-7):H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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