发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A plurality of metal interconnects are formed on a lower interlayer insulating film provided on a semiconductor substrate. An upper interlayer insulating film is formed so as to cover the plural metal interconnects. The upper interlayer insulating film has an air gap between the plural metal interconnects, and a top portion of the air gap is positioned at a level higher than the plural metal interconnects.
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申请公布号 |
US2003022481(A1) |
申请公布日期 |
2003.01.30 |
申请号 |
US20020251975 |
申请日期 |
2002.09.23 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKAGAWA HIDEO;TAMAOKA EIJI |
分类号 |
H01L21/312;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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