发明名称 |
Silicon on insulator device having trench isolation layer and method for manufacturing the same |
摘要 |
A silicon-on-insulator (SOI) device and a method for manufacturing the same includes a substrate, which includes a base layer, a buried oxide layer, and a semiconductor layer, and an isolation layer which is formed in a trench that defines an active region on the semiconductor layer. The trench comprises a first region having a depth smaller than the thickness of the semiconductor layer and a second region having a depth as much as the thickness of the semiconductor layer. The isolation layer includes an oxide layer and a nitride liner that are sequentially formed along the surface of the trench and a dielectric layer that fills the trench.
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申请公布号 |
US2003020117(A1) |
申请公布日期 |
2003.01.30 |
申请号 |
US20020114215 |
申请日期 |
2002.04.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE TAE-JUNG;KIM BYUNG-SUN;OH MYOUNG-HWAN;YOO SEUNG-HAN;SHIN MYUNG-SUN;PARK SANG-WOOK |
分类号 |
H01L21/76;H01L21/336;H01L21/762;H01L27/12;H01L29/786;(IPC1-7):H01L27/01;H01L31/039 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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