| 发明名称 |
Fault-tolerant solid state memory |
| 摘要 |
A solid state memory device is fabricated by forming a level of the device; identifying defective areas in the level; and programming address logic of the level to avoid the defective areas in the level.
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| 申请公布号 |
US2003023897(A1) |
申请公布日期 |
2003.01.30 |
| 申请号 |
US20010911968 |
申请日期 |
2001.07.24 |
| 申请人 |
HOGAN JOSH N. |
发明人 |
HOGAN JOSH N. |
| 分类号 |
H01L27/10;G06F17/50;G11C29/00;G11C29/04;(IPC1-7):H04L1/22 |
主分类号 |
H01L27/10 |
| 代理机构 |
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