发明名称 ISOLATION TECHNIQUE FOR PRESSURE SENSING STRUCTURE
摘要 <p>A pressure sensor (100) in accordance with the invention comprises a die (101) having pressure-sensing electrical components formed in a first side (101b) of the die (101). In one embodiment, a method of securing a cap (119) to silicon die (101) is provided comprising forming a thin glass particle layer (702 on a bonding area (119c) of the cap (119), heating the cap (119) and the thin glass particle layer (702) on the bonding area (119c) to form a substantially continuous glass layer (702) on the bonding area (119c), and heating the cap (119) and silicon die (101) to a temperature above the melting point of the glass to form a bond between the cap (119) and the silicon die (101).</p>
申请公布号 WO03008921(A1) 申请公布日期 2003.01.30
申请号 WO2001US22816 申请日期 2001.07.18
申请人 MEASUREMENT SPECIALTIES, INC.;WAGNER, DAVID, E.;LOPOPOLO, GERALD;HOFFMAN, JAMES, H. 发明人 WAGNER, DAVID, E.;LOPOPOLO, GERALD;HOFFMAN, JAMES, H.
分类号 G01L7/08;G01L9/00;(IPC1-7):G01L7/08;H01G7/00 主分类号 G01L7/08
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