发明名称 DRAM cell refreshment method and circuit
摘要 A device and a method for refreshing the voltage of a circuit line that provides the capability of bringing the circuit line to a ground voltage or to a first voltage. The method provides storing the circuit line voltage in a capacitor; and controlling, by means of the stored voltage, a switch connecting the circuit line to a second voltage of absolute value greater than the first voltage, whereby the circuit line is set to the second voltage if, during the step of storing, the circuit line was at the first voltage.
申请公布号 US2003022427(A1) 申请公布日期 2003.01.30
申请号 US20020186289 申请日期 2002.06.27
申请人 STMICROELECTRONICS S.A. 发明人 FERRANT RICHARD;VAUTRIN FLORENT
分类号 G11C11/406;(IPC1-7):H01L21/823 主分类号 G11C11/406
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