发明名称 |
SELECTIVE BASE ETCHING |
摘要 |
The present invention relates to a method for selective etching in the manufacture of a semiconductor device and comprises: forming a layer (6) of silicon-germanium on a substrate (1) of monocrystalline silicon or on a substrate at least comprising a surface layer of monocrystalline silicon, depositing at least a dielectric layer (7) on the silicon-germanium layer (6) and patterning the resultant structure (8), whereafter the dielectric layer (7) and the silicon-germanium layer (6) are etched away within a predetermined region (9). Preferably, the silicon-germanium layer (6) is amorphous, whereby the dielectric layer (7) is deposited on the amorphous silicon-germanium layer (6) in such a manner to prevent crystallization of the amorphous layer. After etching the structure may be heat-treated such that the amorphous layer crystallizes. The method is preferably applicable for etching an emitter window in the manufacture of a bipolar transistor having a self-registered base-emitter structure.
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申请公布号 |
WO03009353(A1) |
申请公布日期 |
2003.01.30 |
申请号 |
WO2002SE01361 |
申请日期 |
2002.07.09 |
申请人 |
TELEFONAKTIEBOLAGET L M ERICSSON;JOHANSSON, TED;NORSTROEM, HANS |
发明人 |
JOHANSSON, TED;NORSTROEM, HANS |
分类号 |
H01L21/3213;H01L21/331;(IPC1-7):H01L21/20;H01L21/30;H01L21/328 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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